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IPU60R1K0CEAKMA1

IPU60R1K0CEAKMA1

IPU60R1K0CEAKMA1

Infineon Technologies

MOSFET N-CH 600V TO-251-3

SOT-23

IPU60R1K0CEAKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2015
Series CoolMOS™ CE
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 46 mJ
RoHS Status Non-RoHS Compliant

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