IPU80R1K0CEAKMA1

new-10%

Manufacturer part number:IPU80R1K0CEAKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 800V 5.7A TO251

Case Package:SOT-23

Datasheet:IPU80R1K0CEAKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™ CE
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	950m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	785pF @ 100V
Current - Continuous Drain (Id) @ 25°C	5.7A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	5.7A
Drain-source On Resistance-Max	0.95Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	800V
RoHS Status	ROHS3 Compliant