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FDC638APZ

FDC638APZ

FDC638APZ

ON Semiconductor

FDC638APZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDC638APZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 43MOhm
Subcategory Other Transistors
Voltage - Rated DC -12V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -4.5A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 43m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) -4.5A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 20A
Dual Supply Voltage -20V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3mm
Width 1.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.16760 $0.5028
6,000 $0.15679 $0.94074
15,000 $0.14598 $2.1897
30,000 $0.13841 $4.1523
FDC638APZ Product Details

FDC638APZ Description


FDC638APZ is a type of P-channel PowerTrench? MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to provide low on-state resistance while maintaining a fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for load switching and power management, battery charging circuits, and DC/DC conversion.



FDC638APZ Features


  • Low gate charge

  • Low RDS (on)

  • Low on-state resistance

  • Superior switching performance

  • Available in the SuperSOT-6 package



FDC638APZ Applications


  • Load switching 

  • Power management

  • Battery charging circuits

  • DC/DC conversion


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