FDC638APZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC638APZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
43MOhm
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-4.5A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
6 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
43m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C
4.5A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 4.5V
Rise Time
20ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
-4.5A
Threshold Voltage
-800mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Pulsed Drain Current-Max (IDM)
20A
Dual Supply Voltage
-20V
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
3mm
Width
1.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDC638APZ Product Details
FDC638APZ Description
FDC638APZ is a type of P-channel PowerTrench? MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to provide low on-state resistance while maintaining a fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for load switching and power management, battery charging circuits, and DC/DC conversion.