IPW60R045CPAFKSA1

new-10%

Manufacturer part number:IPW60R045CPAFKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 60A TO-247

Case Package:SOT-23

Datasheet:IPW60R045CPAFKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2010
Series	Automotive, AEC-Q101, CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	431W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	431W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	230A
Max Junction Temperature (Tj)	150°C
Height	25.4mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free