IPU80R1K4CEAKMA1

new-10%

Manufacturer part number:IPU80R1K4CEAKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 800V TO251-3

Case Package:SOT-23

Datasheet:IPU80R1K4CEAKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Surface Mount
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	63W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id	3.9V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3.9A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	3.9A
Pulsed Drain Current-Max (IDM)	12A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	170 mJ
RoHS Status	RoHS Compliant