STW38NB20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW38NB20 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
38A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW38N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
180W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 19A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
38A Tc
Gate Charge (Qg) (Max) @ Vgs
95nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
38A
JEDEC-95 Code
TO-247AC
Drain-source On Resistance-Max
0.065Ohm
Pulsed Drain Current-Max (IDM)
152A
Avalanche Energy Rating (Eas)
550 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
300
$4.47700
$1343.1
STW38NB20 Product Details
STW38NB20 Description
The STW38NB20 is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges.