SQ2360EES-T1-GE3

new-10%

Manufacturer part number:SQ2360EES-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 4.4A TO236

Case Package:SOT-23

Datasheet:SQ2360EES-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Packaging	Digi-Reel®
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	3W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.4A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	11ns
Fall Time (Typ)	8 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	4.4A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.066Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	1.8 mJ
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free