Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 3.9A TO251-3

SOT-23

IPU80R1K4CEBKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package PG-TO251-3
Weight 343.085929mg
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 63W Tc
Element Configuration Single
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 800V
Input Capacitance 570pF
Drain to Source Resistance 1.4Ohm
Rds On Max 1.4 Ω
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.520917 $0.520917
10 $0.491431 $4.91431
100 $0.463614 $46.3614
500 $0.437372 $218.686
1000 $0.412615 $412.615

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News