IXKH35N60C5

new-10%

Manufacturer part number:IXKH35N60C5

Manufacturer:IXYS

Description:MOSFET N-CH 600V 35A TO247AD

Case Package:SOT-23

Datasheet:IXKH35N60C5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	CoolMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	100MOhm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	357W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	3.9V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Continuous Drain Current (ID)	35A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	800 mJ
FET Feature	Super Junction
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free