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IRL540NPBF

IRL540NPBF

IRL540NPBF

Infineon Technologies

IRL540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRL540NPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1998
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 53mOhm
Terminal Finish MATTE TIN OVER NICKEL
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating36A
[email protected] Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 140W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation140W
Case Connection DRAIN
Turn On Delay Time11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Rise Time81ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 290 ns
Nominal Vgs 2 V
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4117 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.59000$1.59
10$1.41800$14.18
100$1.13610$113.61
500$0.89786$448.93

IRL540NPBF Product Details

IRL540NPBF Description

The IRL540NPBF is an N-channel HEXFET? Power MOSFET with a low on-resistance per silicon area and quick switching performance. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.


IRL540NPBF Features

  • Dynamic dv/dt rating

  • Fully avalanche rated

  • Logic-level gate drive

  • Advanced process technology

  • Planar cell structure for wide SOA

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100kHz

  • Industry-standard through-hole power package

  • High-current rating


IRL540NPBF Applications

  • Power Management

  • DC motors

  • Inverters

  • SMPS

  • lighting

  • load switches as well as battery-powered applications


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