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TK40P03M1(T6RSS-Q)

TK40P03M1(T6RSS-Q)

TK40P03M1(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A 3DP 2-7K1A

SOT-23

TK40P03M1(T6RSS-Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package DP
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 33W
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.15nF
Rds On Max 10.8 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.125786 $0.125786
10 $0.118666 $1.18666
100 $0.111949 $11.1949
500 $0.105612 $52.806
1000 $0.099634 $99.634

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