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FDJ129P

  • FDJ129P
  • FDJ129P

FDJ129P

FDJ129P

ON Semiconductor

FDJ129P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDJ129P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC75-6 FLMP
Supplier Device Package SC75-6 FLMP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.6W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.074240 $0.07424
500 $0.054588 $27.294
1000 $0.045490 $45.49
2000 $0.041734 $83.468
5000 $0.039004 $195.02
10000 $0.036283 $362.83
15000 $0.035090 $526.35
50000 $0.034503 $1725.15
FDJ129P Product Details

FDJ129P Description


This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. The operating temperature of FDJ129P is -55°C~150°C TJ and its maximum power dissipation is 1.6W Ta.



FDJ129P Features


  • Low gate charge

  • High-performance trench technology for extremely low RDS(ON)

  • Compact industry standard SC75-6 surface mount package

  • RoHS Compliant



FDJ129P Applications


  • Battery management

  • Load switch


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