IXFX200N10P

new-10%

Manufacturer part number:IXFX200N10P

Manufacturer:IXYS

Description:MOSFET N-CH 100V 200A PLUS247

Case Package:SOT-23

Datasheet:IXFX200N10P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarP2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	830W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	7600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200A Tc
Gate Charge (Qg) (Max) @ Vgs	235nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	200A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0075Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	4000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free