IRFB4620PBF

new-10%

Manufacturer part number:IRFB4620PBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 72.5m Ω @ 15A, 10V ±20V 1710pF @ 50V 38nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IRFB4620PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2008
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	72.5MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	144W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	144W
Turn On Delay Time	13.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	72.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	22.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14.8 ns
Turn-Off Delay Time	25.4 ns
Continuous Drain Current (ID)	25A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Nominal Vgs	3 V
Height	9.02mm
Length	10.668mm
Width	4.826mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free