FDP5680 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDP5680 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-65°C~175°C TJ
Packaging
Tube
Published
1999
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
65W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.65000
$1.65
500
$1.6335
$816.75
1000
$1.617
$1617
1500
$1.6005
$2400.75
2000
$1.584
$3168
2500
$1.5675
$3918.75
FDP5680 Product Details
FDP5680 Description
FDP5680 is a type of N-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor to provide superior switching performance and lower gate charge compared to other MOSFETs based on its comparable RDS (on) specification. Based on either synchronous or conventional switching PWM controllers, it is able to improve the efficiency of DC/DC converters.