IPW60R045CPFKSA1

new-10%

Manufacturer part number:IPW60R045CPFKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube

Case Package:SOT-23

Datasheet:IPW60R045CPFKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	49 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	60A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	431W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	431W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	600V
Height	25.549mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free