FQD4N50TM

new-10%

Manufacturer part number:FQD4N50TM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 2.6A DPAK

Case Package:SOT-23

Datasheet:FQD4N50TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	2.7Ohm
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	2.6A
Number of Elements	1
Power Dissipation-Max	2.5W Ta 45W Tc
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.6A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Height	2.3mm
Length	6.6mm
Width	6.1mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free