SIR876ADP-T1-GE3

new-10%

Manufacturer part number:SIR876ADP-T1-GE3

Manufacturer:Vishay Siliconix

Description:Single N-Channel 100 V 14.5 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8

Case Package:SOT-23

Datasheet:SIR876ADP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Manufacturer Package Identifier	S17-0173-Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	14.5MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Pin Count	8
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5W Ta 62.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 50V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	15.2A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	40A
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	150°C
Height	1.17mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free