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STW26NM50

STW26NM50

STW26NM50

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 13A, 10V ±30V 3000pF @ 25V 106nC @ 10V TO-247-3

SOT-23

STW26NM50 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status NRND (Last Updated: 8 months ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 9.071847g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series MDmesh™
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 120mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating30A
Base Part Number STW26N
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 313W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation313W
Turn On Delay Time28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Rise Time15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 26A
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 740 mJ
Max Junction Temperature (Tj) 150°C
Height 24.45mm
Length 15.75mm
Width 5.15mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:602 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.35000$12.35
30$10.26900$308.07
120$9.34500$1121.4
510$7.95900$4059.09

STW26NM50 Product Details

STW26NM50 Description

STW26NM50 MOSFET is built on well-established silicon processes that supply designers with an array of devices. STW26NM50 N-channel MOSFET comes in a variety of through-hole and surface mount packaging, with standard footprints, for easy design. STW26NM50 STMicroelectronics is utilized to control High-Frequency Synchronous Buck Converters for computer Processor Power, High Frequency Isolated DC-DC Convertors with Synchronous Rectification Telecom and Industrial use.

STW26NM50 Features

Low input capacitance

High dv/dt and avalanche capabilities

Improved ESD capability

Low gate charge

STW26NM50 Applications

Reverse Polarity Switch

DC/DC Conversion

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

Telecom and Industrial Use


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