STW26NM50

new-10%

Manufacturer part number:STW26NM50

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 13A, 10V ±30V 3000pF @ 25V 106nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:STW26NM50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	9.071847g
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	120mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	30A
Base Part Number	STW26N
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	313W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	313W
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	106nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	26A
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	740 mJ
Max Junction Temperature (Tj)	150°C
Height	24.45mm
Length	15.75mm
Width	5.15mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free