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PSMN012-80BS,118

PSMN012-80BS,118

PSMN012-80BS,118

Nexperia USA Inc.

N-Channel Tape & Reel (TR) 11m Ω @ 15A, 10V ±20V 2782pF @ 12V 43nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

PSMN012-80BS,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 148W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 148W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2782pF @ 12V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 74A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 73V
Pulsed Drain Current-Max (IDM) 295A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.983120 $6.98312
10 $6.587849 $65.87849
100 $6.214952 $621.4952
500 $5.863162 $2931.581
1000 $5.531285 $5531.285
PSMN012-80BS,118 Product Details

PSMN012-80BS,118 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2782pF @ 12V.This device conducts a continuous drain current (ID) of 74A, which is the maximum continuous current transistor can conduct.Using VGS=73V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 73V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 295A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 80V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

PSMN012-80BS,118 Features


a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 73V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 295A.


PSMN012-80BS,118 Applications


There are a lot of Nexperia USA Inc.
PSMN012-80BS,118 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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