IPW60R165CPFKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 522 mJ.The maximum input capacitance of this device is 2000pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 21A.There is no pulsed drain current maximum for this device based on its rated peak drain current 61A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IPW60R165CPFKSA1 Features
the avalanche energy rating (Eas) is 522 mJ
based on its rated peak drain current 61A.
a 600V drain to source voltage (Vdss)
IPW60R165CPFKSA1 Applications
There are a lot of Infineon Technologies
IPW60R165CPFKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
