IRF1324S-7PPBF

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IRF1324S-7PPBF

Manufacturer part number:IRF1324S-7PPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 24V 429A D2PAK-7

Case Package:SOT-23

Datasheet:IRF1324S-7PPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	24V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	429A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1m Ω @ 160A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7700pF @ 19V
Current - Continuous Drain (Id) @ 25°C	240A Tc
Gate Charge (Qg) (Max) @ Vgs	252nC @ 10V
Rise Time	240ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	93 ns
Turn-Off Delay Time	86 ns
Continuous Drain Current (ID)	429A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	240A
Drain to Source Breakdown Voltage	24V
Dual Supply Voltage	24V
Avalanche Energy Rating (Eas)	230 mJ
Recovery Time	107 ns
Nominal Vgs	4 V
Height	4.5466mm
Length	10.795mm
Width	8.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free