FQP9N50C

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Manufacturer part number:FQP9N50C

Manufacturer:ON Semiconductor

Description:FQP9N50C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP9N50C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	9A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	135W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	135W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	65ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	64 ns
Turn-Off Delay Time	93 ns
Continuous Drain Current (ID)	9A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	500V
Dual Supply Voltage	500V
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free