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IRF1405LPBF

IRF1405LPBF

IRF1405LPBF

Infineon Technologies

MOSFET N-CH 55V 131A TO-262

SOT-23

IRF1405LPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 131A
Number of Elements 1
Power Dissipation-Max 200W Tc
Power Dissipation 200W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.3mOhm @ 101A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 131A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 131A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 5.48nF
Drain to Source Resistance 5.3mOhm
Rds On Max 5.3 mΩ
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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