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IRF2807L

IRF2807L

IRF2807L

Infineon Technologies

MOSFET N-CH 75V 82A TO-262

SOT-23

IRF2807L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 82A
Power Dissipation-Max 230W Tc
Power Dissipation 200W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 64ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 82A
Drain to Source Breakdown Voltage 75V
Input Capacitance 3.82nF
Rds On Max 13 mΩ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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