SI4876DY-T1-E3

new-10%

Manufacturer part number:SI4876DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 21A 3.6W

Case Package:SOT-23

Datasheet:SI4876DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	34mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 21A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	14A Ta
Gate Charge (Qg) (Max) @ Vgs	80nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	175 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	14A
Drain to Source Breakdown Voltage	20V
Height	1.5494mm
Length	4.9784mm
Width	3.9878mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free