IRFIBF20G

new-10%

Manufacturer part number:IRFIBF20G

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 900V 1.2A TO220FP

Case Package:SOT-23

Datasheet:IRFIBF20G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Supplier Device Package	TO-220-3
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8Ohm @ 720mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.2A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	21ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	1.2A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	900V
Input Capacitance	490pF
Drain to Source Resistance	8Ohm
Rds On Max	8 Ω
Height	9.8mm
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant