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IRF3000PBF

IRF3000PBF

IRF3000PBF

Infineon Technologies

MOSFET N-CH 300V 1.6A 8-SOIC

SOT-23

IRF3000PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Current Rating 1.6A
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 960mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 7.2ns
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 1.6A
Drain to Source Breakdown Voltage 300V
Input Capacitance 730pF
Rds On Max 400 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

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