SI1307DL-T1-GE3

new-10%

Manufacturer part number:SI1307DL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 0.85A SOT323-3

Case Package:SOT-23

Datasheet:SI1307DL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	290mW Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	7.5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	290m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	850mA Ta
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Rise Time	32ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	11.5 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	850mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.85A
Drain-source On Resistance-Max	0.29Ohm
DS Breakdown Voltage-Min	12V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant