PH5525L,115

new-10%

Manufacturer part number:PH5525L,115

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 25V 81.7A LFPAK

Case Package:SOT-23

Datasheet:PH5525L,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	62.5W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2150pF @ 12V
Current - Continuous Drain (Id) @ 25°C	81.7A Tc
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 4.5V
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	MO-235
Drain Current-Max (Abs) (ID)	81.7A
Drain-source On Resistance-Max	0.0082Ohm
Pulsed Drain Current-Max (IDM)	300A
DS Breakdown Voltage-Min	25V
Avalanche Energy Rating (Eas)	100 mJ
RoHS Status	ROHS3 Compliant