SI3493DV-T1-E3

new-10%

Manufacturer part number:SI3493DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 5.3A 6-TSOP

Case Package:SOT-23

Datasheet:SI3493DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	27mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Power Dissipation	1.9W
Turn On Delay Time	20 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	27mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.3A Ta
Gate Charge (Qg) (Max) @ Vgs	32nC @ 4.5V
Rise Time	40ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	5.3A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Drain to Source Resistance	27mOhm
Rds On Max	27 mΩ
Height	990.6μm
Length	3.0988mm
Width	1.7018mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free