IRF3315STRLPBF

new-10%

Manufacturer part number:IRF3315STRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 150V 21A D2PAK

Case Package:SOT-23

Datasheet:IRF3315STRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	82mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	21A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.8W Ta 94W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	94W
Case Connection	DRAIN
Turn On Delay Time	9.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	82m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	84A
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead