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IRF3707STRLPBF

IRF3707STRLPBF

IRF3707STRLPBF

Infineon Technologies

MOSFET N-CH 30V 62A D2PAK

SOT-23

IRF3707STRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 87W Tc
Power Dissipation 87W
Turn On Delay Time 8.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 15V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Rise Time 78ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.3 ns
Turn-Off Delay Time 11.8 ns
Continuous Drain Current (ID) 62A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.99nF
Drain to Source Resistance 12.5mOhm
Rds On Max 12.5 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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