IRF3707ZSPBF

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IRF3707ZSPBF

Manufacturer part number:IRF3707ZSPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 59A D2PAK

Case Package:SOT-23

Datasheet:IRF3707ZSPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	12.5MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	59A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	57W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	57W
Case Connection	DRAIN
Turn On Delay Time	9.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.5m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1210pF @ 15V
Current - Continuous Drain (Id) @ 25°C	59A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	41ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	59A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	42A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Avalanche Energy Rating (Eas)	40 mJ
Recovery Time	59 ns
Nominal Vgs	1.8 V
Height	4.83mm
Length	10.67mm
Width	9.652mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free