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FDS5170N7

FDS5170N7

FDS5170N7

ON Semiconductor

MOSFET N-CH 60V 10.6A 8-SOIC

SOT-23

FDS5170N7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2889pF @ 30V
Current - Continuous Drain (Id) @ 25°C 10.6A Ta
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V

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