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IRF3709ZLPBF

IRF3709ZLPBF

IRF3709ZLPBF

Infineon Technologies

MOSFET N-CH 30V 87A TO-262

SOT-23

IRF3709ZLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.3MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 87A
Number of Elements 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Power Dissipation 79W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C 87A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 41ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 87A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.13nF
Drain to Source Resistance 6.3mOhm
Rds On Max 6.3 mΩ
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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