IRF3709ZPBF

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IRF3709ZPBF

Manufacturer part number:IRF3709ZPBF

Manufacturer:Infineon Technologies

Description:IRF3709ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF3709ZPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	6.3MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	87A
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79mW
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.3m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C	87A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Rise Time	41ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.7 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	87A
Threshold Voltage	2.25V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	42A
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	60 mJ
Recovery Time	24 ns
Nominal Vgs	20 V
Height	8.763mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free