IRF3709ZSTRRPBF

new-10%

Manufacturer part number:IRF3709ZSTRRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 87A D2PAK

Case Package:SOT-23

Datasheet:IRF3709ZSTRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	6.3MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	79W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.3m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C	87A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Rise Time	41ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.7 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	87A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	42A
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	60 mJ
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free