IRF3711PBF

new-10%

Manufacturer part number:IRF3711PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 110A TO-220AB

Case Package:SOT-23

Datasheet:IRF3711PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	6MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	110A
Number of Elements	1
Power Dissipation-Max	3.1W Ta 120W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	120W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2980pF @ 10V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	44nC @ 4.5V
Rise Time	220ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	440A
Dual Supply Voltage	20V
Avalanche Energy Rating (Eas)	460 mJ
Nominal Vgs	3 V
Height	8.763mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free