IRF3805S Description
The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device for a wide range of applications.
IRF3805S Features
Technology for Advanced Processes.
On-Resistance is really low.
Operating Temperature: 175°C.
Quick Switching.
Avalanche Repetitive Tjmax is allowed.
Lead-Free.