Name: IRF4905PBF
Brand: Infineon Technologies
SKU: IRF4905PBF
Price: 2.67000 USD
Availability: InStock

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IRF4905PBF

Manufacturer part number:IRF4905PBF

Manufacturer:Infineon Technologies

Description:IRF4905PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF4905PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	Other Transistors
Voltage - Rated DC	-55V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
Current Rating	-74A
[email protected] Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	74A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	99ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	96 ns
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	-74A
Threshold Voltage	-4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	64A
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	-55V
Pulsed Drain Current-Max (IDM)	260A
Dual Supply Voltage	-55V
Recovery Time	130 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	19.8mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRF4905PBF Product Details

Description

The IRF4905PBF is a TO-220AB single P channel HEXFET power MOSFET with a voltage of -55V. This MOSFET has a low resistance per silicon area, a dynamic dv/dt rating, is rugged, rapid switching, and completely avalanche certified. As a result, power MOSFETs are well known for providing high efficiency and reliability in a wide range of applications.