IRF4905PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF4905PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1997
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
Other Transistors
Voltage - Rated DC
-55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
-74A
[email protected] Reflow Temperature-Max (s)
30
Lead Pitch
2.54mm
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
74A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Rise Time
99ns
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
96 ns
Turn-Off Delay Time
61 ns
Continuous Drain Current (ID)
-74A
Threshold Voltage
-4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
64A
Drain-source On Resistance-Max
0.02Ohm
Drain to Source Breakdown Voltage
-55V
Pulsed Drain Current-Max (IDM)
260A
Dual Supply Voltage
-55V
Recovery Time
130 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
-4 V
Height
19.8mm
Length
10.5156mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.41000
$2.41
10
$2.18700
$21.87
100
$1.78240
$178.24
500
$1.41452
$707.26
IRF4905PBF Product Details
Description
The IRF4905PBF is a TO-220AB single P channel HEXFET power MOSFET with a voltage of -55V. This MOSFET has a low resistance per silicon area, a dynamic dv/dt rating, is rugged, rapid switching, and completely avalanche certified. As a result, power MOSFETs are well known for providing high efficiency and reliability in a wide range of applications.