TK39N60W,S1VF Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4100pF @ 300V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 38.8A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 200 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 55mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

TK39N60W,S1VF Features

a continuous drain current (ID) of 38.8A
the turn-off delay time is 200 ns
single MOSFETs transistor is 55mOhm
a 600V drain to source voltage (Vdss)

TK39N60W,S1VF Applications

There are a lot of Toshiba Semiconductor and Storage
TK39N60W,S1VF applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools