SCTW100N65G2AG Description
SCTW100N65G2AG is an Automotive-grade silicon carbide Power MOSFET manufactured by STMicroelectronics. The silicon carbide Power MOSFET SCTW100N65G2AG has been developed using ST's advanced and innovative 2nd generation SiC MOSFET technology.
The STMicroelectronics SCTW100N65G2AG features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
SCTW100N65G2AG Features
The very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
In Hip-247 package
AEC-Q101 qualified
SCTW100N65G2AG Applications
