SCTW100N65G2AG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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SCTW100N65G2AG Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~200°C TJ
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
420W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
26m Ω @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds
3315pF @ 520V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
162nC @ 18V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
18V
Vgs (Max)
+22V, -10V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$39.56000
$39.56
500
$39.1644
$19582.2
1000
$38.7688
$38768.8
1500
$38.3732
$57559.8
2000
$37.9776
$75955.2
2500
$37.582
$93955
SCTW100N65G2AG Product Details
SCTW100N65G2AG Description
SCTW100N65G2AG is an Automotive-grade silicon carbide Power MOSFET manufactured by STMicroelectronics. The silicon carbide Power MOSFET SCTW100N65G2AG has been developed using ST's advanced and innovative 2nd generation SiC MOSFET technology.
The STMicroelectronics SCTW100N65G2AG features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
SCTW100N65G2AG Features
The very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)