TK60D08J1(Q)

new-10%

Manufacturer part number:TK60D08J1(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 75V 60A TO220W

Case Package:SOT-23

Datasheet:TK60D08J1(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	67
Supplier Device Package	TO-220(W)
Operating Temperature	150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Power Dissipation	140W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5450pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A Ta
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Input Capacitance	5.45nF
Drain to Source Resistance	78mOhm
Rds On Max	7.8 mΩ
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant