Name: IRF5805
Brand: Infineon Technologies
SKU: IRF5805
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tube
Published	2003
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	98m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	511pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	3.8A
Drain-source On Resistance-Max	0.098Ohm
Pulsed Drain Current-Max (IDM)	15A
DS Breakdown Voltage-Min	30V
RoHS Status	Non-RoHS Compliant

IRF5805 Product Details

IRF5805 Description

The exceptionally low on-resistance per silicon area of these P-channel MOSFETs from International Rectifier is the result of sophisticated processing procedures. This advantage gives the designer access to a highly effective tool for use in load and battery management applications.

A HEXFET power MOSFET with a TSOP-6 packaging and modified leadframe has an RDS(on) that is 60% lower than that of an equivalent-sized SOT-23. For situations where printed circuit board space is at a premium, this package is perfect. Its distinctive thermal design and RDS(on) decrease allow it to handle current about 300 percent more than the SOT-23.