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IRF5806

IRF5806

IRF5806

Infineon Technologies

IRF5806 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF5806 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 86m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 594pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 4A
RoHS Status Non-RoHS Compliant
IRF5806 Product Details

IRF5806 Description


International Rectifier's new trench HEXFET? Power MOSFETs use cutting-edge manufacturing processes to produce incredibly low on-resistance per silicon area. The designer is given an incredibly effective and dependable device to employ in battery and load management applications because to this benefit and the ruggedized device design that HEXFET powerMOSFETs are widely renowned for.



IRF5806 Features


  • Ultra Low On-Resistance

  • P-Channel MOSFET

  • Surface Mount

  • Available in Tape & Reel

  • Low Gate Charge



IRF5806 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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