FQPF5N60 Description
These N-channel enhanced mode power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is tailor-made to minimize on-resistance and provides excellent switching performance. And can withstand high energy pulses in AVA anchoring and rectifying mode. These devices are suitable for high efficiency switching mode power supply.
FQPF5N60 Features
·8A600VRDs(on)=2.0Ω@VGs=10V
·Low gate charge(typical 16nC)
·Low Crss(typical 9.0 pF)
·Fast switching
100% avalanche tested
·Improved dvidt capability
·TO-220F package isolation=4.0kV(Note6)
FQPF5N60 Applications
high efficiency switching mode power supply
