FQPF5N60

new-10%

Manufacturer part number:FQPF5N60

Manufacturer:ON Semiconductor

Description:FQPF5N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF5N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	2.8A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	730pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	2.8A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4.5A
Drain-source On Resistance-Max	2.5Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	18A
Avalanche Energy Rating (Eas)	210 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free