IRF630NSTRRPBF

new-10%

IRF630NSTRRPBF

Manufacturer part number:IRF630NSTRRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 9.3A D2PAK

Case Package:SOT-23

Datasheet:IRF630NSTRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	9.3A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	82W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	82W
Case Connection	DRAIN
Turn On Delay Time	7.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	575pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.3A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	9.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	94 mJ
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free