FDS4435 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDS4435 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Resistance
20MOhm
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Current Rating
-8.8A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Power Dissipation
2.5W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
20m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1604pF @ 15V
Current - Continuous Drain (Id) @ 25°C
8.8A Ta
Gate Charge (Qg) (Max) @ Vgs
24nC @ 5V
Rise Time
13.5ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
8.8A
Threshold Voltage
-1.7V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Nominal Vgs
-1.7 V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FDS4435 Product Details
FDS4435 Description
FDS4435 is a -30v P-Channel PowerTrench? MOSFET. The P-Channel MOSFET FDS4435 is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. The onsemi FDS4435 has been optimized for power management applications requiring a wide range of given drive voltage ratings (4.5V - 25V).
FDS4435 Features
-8.8A, -30V rDS(on)= 20 mQ @Vcs =-10 V
rDS(on)= 35 mQ @ Vcs =-4.5 V
Low gate charge (17nC typical)
Fast switching speed
High-performance trench technology for extremely low rDS(on)