IPB70N04S3-07

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IPB70N04S3-07

Manufacturer part number:IPB70N04S3-07

Manufacturer:Infineon Technologies

Description:MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms

Case Package:SOT-23

Datasheet:IPB70N04S3-07 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.2m Ω @ 70A, 10V
Vgs(th) (Max) @ Id	4V @ 50μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain Current-Max (Abs) (ID)	70A
Drain-source On Resistance-Max	0.0071Ohm
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	145 mJ
Height	4.4mm
Length	10mm
Width	9.25mm
RoHS Status	RoHS Compliant